Paper Title:
Bonding γ-TiAl Alloys Using Ti/Al Nanolayers Doped with Ag
  Abstract

Successful solid state bonding of titanium aluminides requires the use of high temperature and pressure. In previous works, authors have demonstrated that the use of Ti/Al multilayer thin film as an interlayer, deposited by d.c. magnetron sputtering onto the joining surfaces, can effectively lower the bonding temperature. The enhanced diffusivity of these nanometric layers and the heat evolved by the formation of γ-TiAl improves the joinability of titanium aluminide by solid-state diffusion bonding. In the present work, further improvement of the process was pursued by doping the interlayer with 2.8 at.% of Ag; previous studies have confirmed that silver favours the transformation Ti+Al→γ-TiAl. The solid-state diffusion bonding experiments were performed in vacuum by applying 50 MPa at 900°C for 1 h. The effect of the third element on the microstructure and chemical composition along the bonding interface has been analyzed. Microstructural characterisation of the interface was performed by scanning and transmission electron microscopy. Chemical compositions were analysed by energy dispersive X-ray spectroscopy. No defects were observed at the interface and sound bonding was achieved between the interlayers and base γ-TiAl. The bonding interface shows a fine-grained microstructure, slightly coarser than the one formed at the same temperature with the undoped Ti/Al multilayer.

  Info
Periodical
Materials Science Forum (Volumes 587-588)
Edited by
António Torres Marques, António Fernando Silva, António Paulo Monteiro Baptista, Carlos Sá, Fernando Jorge Lino Alves, Luís Filipe Malheiros and Manuel Vieira
Pages
488-491
DOI
10.4028/www.scientific.net/MSF.587-588.488
Citation
L. I. Duarte, F. Viana, M. F. Vieira, A. S. Ramos, M. T. Vieira, U.E. Klotz, "Bonding γ-TiAl Alloys Using Ti/Al Nanolayers Doped with Ag", Materials Science Forum, Vols. 587-588, pp. 488-491, 2008
Online since
June 2008
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$32.00
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