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Advances in Light Emitting Materials

Materials Science Forum Volume 590

• Papers
• Abstracts

• p0 Preface   [ 9 K ]
• p1 Visible Light-Emitting Diodes - The Formative Years   [ 196 K ]
  Authors: J.W. Allen, Hermann G. Grimmeiss
• p17 Perspective on the Development of III-Nitrides for Optical Emitters   [ 501 K ]
  Authors: Bo Monemar
• p29 Dislocations in Silicon and D-Band Luminescence for Infrared Light Emitters   [ 947 K ]
  Authors: Vitaly V. Kveder, Martin Kittler
• p57 Dislocation Networks Formed by Silicon Wafer Direct Bonding   [ 1 M ]
  Authors: Manfred Reiche
• p79 Si- and SiGe-Based LEDs   [ 3 M ]
  Authors: N.A. Sobolev
• p101 SOI-LEDs with Carrier Confinement   [ 3 M ]
  Authors: Tu Hoang, Jisk Holleman, Jurriaan Schmitz
• p117 MOS Light Emitting Devices Based on Rare-Earth Ion Implantation   [ 2 M ]
  Authors: L. Rebohle, Wolfgang Skorupa
• p141 Present Status of Deep UV Nitride Light Emitters   [ 678 K ]
  Authors: Asif Khan, Krishnan Balakrishnan
• p175 AlN and AlGaN by MOVPE for UV Light Emitting Devices   [ 3 M ]
  Authors: Hiroshi Amano, Masataka Imura, Motoaki Iwaya, Satoshi Kamiyama, Isamu Akasaki
• p211 Nonpolar and Semipolar Orientations: Material Growth and Properties   [ 2 M ]
  Authors: Hisashi Masui, Shuji Nakamura
• p233 Impact of Point Defects on the Luminescence Properties of (Al,Ga)N   [ 369 K ]
  Authors: Shigefusa F. Chichibu, Akira Uedono, Takeyoshi Onuma, Steven P. DenBaars, Umesh K. Mishra, James S. Speck, Shuji Nakamura
• p249 Assessment and Modification of Recombination Dynamics in In_xGa_1-xN-Based Quantum Wells   [ 3 M ]
  Authors: Yoichi Kawakami, Akio Kaneta, Mitsuru Funato