MOS Light Emitting Devices Based on
Rare-Earth Ion Implantation
|
| Journal |
Materials Science Forum (Volume 590) |
| Volume |
Advances in Light Emitting Materials |
| Edited by |
Bo Monemar, Martin Kittler, Hermann Grimmeiss |
| Pages |
117-138 |
| DOI |
10.4028/www.scientific.net/MSF.590.117 |
| Online since |
August, 2008 |
| Authors |
L. Rebohle,
Wolfgang Skorupa
|
| Keywords |
Electroluminescence, Rare Earth Ion Implantation, Silicon-Based Light Emission |
| Abstract |
In this article we will give an overview of our work devoted to Si-based light emission
which was done in the last years. Si-based light emitters were fabricated by ion implantation of rare
earth elements into the oxide layer of a conventional MOS structure. Efficient electroluminescence
was obtained for the wavelength range from UV to the visible by using a transparent top electrode
made of indium-tin oxide. In the case of Tb-implantation the best devices reach an external
quantum efficiency of 16 % which corresponds to a power efficiency in the order of 0.3 %. The
properties of the microstructure, the IV characteristics and the electroluminescence spectra were
evaluated. The electroluminescence was found to be caused by hot electron impact excitation of
rare earth ions, and the electric phenomena of charge transport, luminescence centre excitation,
quenching and degradation are explained in detail. |
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