Paper Title:
MOS Light Emitting Devices Based on Rare-Earth Ion Implantation
  Abstract

In this article we will give an overview of our work devoted to Si-based light emission which was done in the last years. Si-based light emitters were fabricated by ion implantation of rare earth elements into the oxide layer of a conventional MOS structure. Efficient electroluminescence was obtained for the wavelength range from UV to the visible by using a transparent top electrode made of indium-tin oxide. In the case of Tb-implantation the best devices reach an external quantum efficiency of 16 % which corresponds to a power efficiency in the order of 0.3 %. The properties of the microstructure, the IV characteristics and the electroluminescence spectra were evaluated. The electroluminescence was found to be caused by hot electron impact excitation of rare earth ions, and the electric phenomena of charge transport, luminescence centre excitation, quenching and degradation are explained in detail.

  Info
Periodical
Edited by
Bo Monemar, Martin Kittler, Hermann Grimmeiss
Pages
117-138
DOI
10.4028/www.scientific.net/MSF.590.117
Citation
L. Rebohle , W. Skorupa, "MOS Light Emitting Devices Based on Rare-Earth Ion Implantation ", Materials Science Forum, Vol. 590, pp. 117-138, 2008
Online since
August 2008
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