Present Status of Deep UV Nitride Light Emitters |
| Journal |
Materials Science Forum (Volume 590) |
| Volume |
Advances in Light Emitting Materials |
| Edited by |
Bo Monemar, Martin Kittler, Hermann Grimmeiss |
| Pages |
141-174 |
| DOI |
10.4028/www.scientific.net/MSF.590.141 |
| Online since |
August, 2008 |
| Authors |
Asif Khan,
Krishnan Balakrishnan
|
| Keywords |
AlGaN, AlInGaN, Aluminium Nitride (AlN), Deep UV, Epitaxy, GaN, Growth, Laser Diode, Light Emitting Diode (LED), MOCVD, Pulsed Lateral Overgrowth, UV |
| Abstract |
Ultraviolet light emitting diodes with emission wavelengths less than 400 nm have been
developed using the AlInGaN material system. Rapid progress in material growth, device
fabrication and packaging enabled demonstration of deep-UV light-emitting devices with emission
from 400 to 210 nm with varying efficiencies. For high aluminum alloy compositions needed for
the shorter wavelength devices, these materials border between having material properties like
conventional semiconductors and insulators, adding a degree of complexity to developing efficient
light emitting devices. This chapter provides a review of III-nitride based UV light emitting devices
including technical developments that allow for emission in the ultraviolet spectrum, and an
overview of their applications in optoelectronic systems. |
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