Paper Title:
Present Status of Deep UV Nitride Light Emitters
  Abstract

Ultraviolet light emitting diodes with emission wavelengths less than 400 nm have been developed using the AlInGaN material system. Rapid progress in material growth, device fabrication and packaging enabled demonstration of deep-UV light-emitting devices with emission from 400 to 210 nm with varying efficiencies. For high aluminum alloy compositions needed for the shorter wavelength devices, these materials border between having material properties like conventional semiconductors and insulators, adding a degree of complexity to developing efficient light emitting devices. This chapter provides a review of III-nitride based UV light emitting devices including technical developments that allow for emission in the ultraviolet spectrum, and an overview of their applications in optoelectronic systems.

  Info
Periodical
Edited by
Bo Monemar, Martin Kittler, Hermann Grimmeiss
Pages
141-174
DOI
10.4028/www.scientific.net/MSF.590.141
Citation
A. Khan, K. Balakrishnan, "Present Status of Deep UV Nitride Light Emitters", Materials Science Forum, Vol. 590, pp. 141-174, 2008
Online since
August 2008
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: Akira Yoshida, Akihiro Wakahara, Yasuo Nakanishi, Hiroshi Okada, Takeshi Ohshima, Hisayoshi Itoh, Young Tae Kim
890
Authors: Hiroshi Amano, Masataka Imura, Motoaki Iwaya, Satoshi Kamiyama, Isamu Akasaki
Abstract:The fundamental growth issues of AlN and AlGaN on sapphire and SiC using metalorganic vapor phase epitaxy, particularly the growth of AlN...
175
Authors: Fabrizio Roccaforte, Ferdinando Iucolano, Filippo Giannazzo, Giuseppe Moschetti, Corrado Bongiorno, Salvatore Di Franco, Valeria Puglisi, Giuseppe Abbondanza, Vito Raineri
Abstract:Gallium nitride (GaN) and related alloys (AlxGa1-xN) are promising semiconductors for high-frequency and high-power devices applications. In...
967
Authors: Hiroki Miyake, Tsunenobu Kimoto, Jun Suda
Abstract:In this study, new SiC-based heterojunction bipolar transistors (HBT) are proposed. An n-type AlN/GaN short-period superlattice (quasi-AlGaN)...
1029
Authors: Yuri N. Makarov, T.Yu. Chemekova, O.V. Avdeev, N. Mokhov, S.S. Nagalyuk, M.G. Ramm, Heikki Helava
Abstract:AlN substrates are produced by Physical Vapor Transport (PVT) growth of AlN bulk single crystals followed by post growth processing of the...
1183