Paper Title:
Perspective on the Development of III-Nitrides for Optical Emitters
  Abstract

This chapter serves as an introduction to the chapters on III-nitrides in this book. It gives a brief review of the development of relevant III-nitride materials for light emitters since the late 1960´s, when single crystalline GaN layers grown on sapphire were first demonstrated. The first wave of scientific work died out in the late 1970´s, since low-ohmic p-GaN could not be made at the time. After another 10 years several important breakthroughs were made, using the technology of metal organic vapor phase epitaxy (MOVPE). Smooth thin epilayers could be made, and ways to dope the materials n-type as well as p-type were invented. In the period 1986-1997 high brightness violet and blue double heterostructure (DH) LEDs, narrow quantum well (QW) LEDs, and QW based violet laser diodes with a long operating lifetime of 10000 hours were demonstrated, mainly by Japanese groups. Since then the development efforts have spread worldwide, and a large spectrum of novel applications based on nitride emitters are already in practical use. Perhaps the most important one is the future possibility of using nitride LEDs for general lighting purposes.

  Info
Periodical
Edited by
Bo Monemar, Martin Kittler, Hermann Grimmeiss
Pages
17-26
DOI
10.4028/www.scientific.net/MSF.590.17
Citation
B. Monemar, "Perspective on the Development of III-Nitrides for Optical Emitters", Materials Science Forum, Vol. 590, pp. 17-26, 2008
Online since
August 2008
Authors
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: Asif Khan, Krishnan Balakrishnan
Abstract:Ultraviolet light emitting diodes with emission wavelengths less than 400 nm have been developed using the AlInGaN material system. Rapid...
141
Authors: Hiroshi Amano, Masataka Imura, Motoaki Iwaya, Satoshi Kamiyama, Isamu Akasaki
Abstract:The fundamental growth issues of AlN and AlGaN on sapphire and SiC using metalorganic vapor phase epitaxy, particularly the growth of AlN...
175
Authors: Hisashi Masui, Shuji Nakamura
Abstract:Nitride-based optoelectronic devices prepared in the c orientation have been successfully introduced to the global marketplace and are...
211
Authors: Mikael Syväjärvi, Rositza Yakimova, Motoaki Iwaya, Tetsuya Takeuchi, Isamu Akasaki, Satoshi Kamiyama
Chapter 2: SiC Epitaxial Growth
Abstract:The LED technology started to developed many years ago with red light emitting diodes. To achieve the blue LED, novel growth technologies and...
87
Authors: Ai Ping Zhao, Hong Deng, Feng Liu, Xue Ran Deng
Chapter 6: Optical/Electronic/Magnetic Materials
Abstract:The III-nitride compounds epitaxially grown on Si substrate have attracted more and more attentions and some progress have been achieved....
935