AlN and AlGaN by MOVPE for UV Light Emitting Devices |
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| Journal | Materials Science Forum (Volume 590) |
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| Volume | Advances in Light Emitting Materials |
| Edited by | Bo Monemar, Martin Kittler, Hermann Grimmeiss |
| Pages | 175-210 |
| DOI | 10.4028/www.scientific.net/MSF.590.175 |
| Citation | Hiroshi Amano et al., 2008, Materials Science Forum, 590, 175 |
| Online since | August, 2008 |
| Authors | Hiroshi Amano, Masataka Imura, Motoaki Iwaya, Satoshi Kamiyama, Isamu Akasaki |
| Keywords | AlGaN, Aluminium Nitride (AlN), DUV LD, DUV LED, MOVPE, Patterned Template, UV LD, UV LED |
| Abstract | The fundamental growth issues of AlN and AlGaN on sapphire and SiC using metalorganic vapor phase epitaxy, particularly the growth of AlN and AlGaN on a groove-patterned template are reviewed. In addition, the conductivity control of AlGaN is shown. The conductivity control of p-type AlGaN, particularly the realization of a high hole concentration, is essential for realizing high-efficiency UV and DUV LEDs and LDs. |
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