Paper Title:
AlN and AlGaN by MOVPE for UV Light Emitting Devices
  Abstract

The fundamental growth issues of AlN and AlGaN on sapphire and SiC using metalorganic vapor phase epitaxy, particularly the growth of AlN and AlGaN on a groove-patterned template are reviewed. In addition, the conductivity control of AlGaN is shown. The conductivity control of p-type AlGaN, particularly the realization of a high hole concentration, is essential for realizing high-efficiency UV and DUV LEDs and LDs.

  Info
Periodical
Edited by
Bo Monemar, Martin Kittler, Hermann Grimmeiss
Pages
175-210
DOI
10.4028/www.scientific.net/MSF.590.175
Citation
H. Amano, M. Imura, M. Iwaya, S. Kamiyama, I. Akasaki, "AlN and AlGaN by MOVPE for UV Light Emitting Devices", Materials Science Forum, Vol. 590, pp. 175-210, 2008
Online since
August 2008
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$32.00
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