Nonpolar and Semipolar Orientations: Material Growth and Properties |
| Journal |
Materials Science Forum (Volume 590) |
| Volume |
Advances in Light Emitting Materials |
| Edited by |
Bo Monemar, Martin Kittler, Hermann Grimmeiss |
| Pages |
211-232 |
| DOI |
10.4028/www.scientific.net/MSF.590.211 |
| Online since |
August, 2008 |
| Authors |
Hisashi Masui,
Shuji Nakamura
|
| Keywords |
Lateral Epitaxial Overgrowth, Nonpolar Orientation, Semipolar Orientation, Stacking Fault, Threading Dislocation, Wurtzite Gallium Nitride |
| Abstract |
Nitride-based optoelectronic devices prepared in the c orientation have been successfully
introduced to the global marketplace and are changing the way we think about lighting. A part of
the research interest has shifted toward nonpolar and semipolar orientations, which has the potential
to broaden the scope and impact of this technology. This is because quantum-well structures
prepared in nonpolar and semipolar orientations are able to suppress the quantum-confinement
Stark effect, which has a negative impact on optoelectronic device performance. The lower crystal
symmetry of such orientations provides spontaneously polarized light emission. Despite these
attractive properties of nonpolar and semipolar orientations, the corresponding materials growth is
not trivial. The present chapter discusses our efforts on growth of III-nitride materials in nonpolar
and semipolar orientations and the related material properties. |
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