Dislocation Networks Formed by Silicon Wafer Direct Bonding |
| Journal |
Materials Science Forum (Volume 590) |
| Volume |
Advances in Light Emitting Materials |
| Edited by |
Bo Monemar, Martin Kittler, Hermann Grimmeiss |
| Pages |
57-78 |
| DOI |
10.4028/www.scientific.net/MSF.590.57 |
| Online since |
August, 2008 |
| Authors |
Manfred Reiche
|
| Keywords |
Defect Structure and Property, Dislocation, Silicon, Wafer Bonding |
| Abstract |
The paper reviews methods of hydrophobic wafer bonding. Hydrophobic surfaces are
obtained by removing the oxide layer from the surfaces of crystalline silicon substrates. Bonding
such surfaces causes the formation of a dislocation network in the interface. The structure of the
dislocation network depends only on the misalignment (twist and tilt components). The different
dislocation structures are discussed.
Because wafer bonding offers a method to the reproducible formation of such networks, different
applications are possible |
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