Paper Title:
Dislocation Networks Formed by Silicon Wafer Direct Bonding
  Abstract

The paper reviews methods of hydrophobic wafer bonding. Hydrophobic surfaces are obtained by removing the oxide layer from the surfaces of crystalline silicon substrates. Bonding such surfaces causes the formation of a dislocation network in the interface. The structure of the dislocation network depends only on the misalignment (twist and tilt components). The different dislocation structures are discussed. Because wafer bonding offers a method to the reproducible formation of such networks, different applications are possible

  Info
Periodical
Edited by
Bo Monemar, Martin Kittler, Hermann Grimmeiss
Pages
57-78
DOI
10.4028/www.scientific.net/MSF.590.57
Citation
M. Reiche, "Dislocation Networks Formed by Silicon Wafer Direct Bonding", Materials Science Forum, Vol. 590, pp. 57-78, 2008
Online since
August 2008
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