Dislocation Networks Formed by Silicon Wafer Direct Bonding |
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| Journal | Materials Science Forum (Volume 590) |
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| Volume | Advances in Light Emitting Materials |
| Edited by | Bo Monemar, Martin Kittler, Hermann Grimmeiss |
| Pages | 57-78 |
| DOI | 10.4028/www.scientific.net/MSF.590.57 |
| Citation | Manfred Reiche, 2008, Materials Science Forum, 590, 57 |
| Online since | August, 2008 |
| Authors | Manfred Reiche |
| Keywords | Defect Structure and Property, Dislocations, Silicon, Wafer Bonding |
| Abstract | The paper reviews methods of hydrophobic wafer bonding. Hydrophobic surfaces are obtained by removing the oxide layer from the surfaces of crystalline silicon substrates. Bonding such surfaces causes the formation of a dislocation network in the interface. The structure of the dislocation network depends only on the misalignment (twist and tilt components). The different dislocation structures are discussed. Because wafer bonding offers a method to the reproducible formation of such networks, different applications are possible |
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