Ga-Modified Nanostructured ZnO: Characterization and Application in Dye-Sensitized Solar Cells |
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| Journal | Materials Science Forum (Volumes 591 - 593) |
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| Volume | Advanced Powder Technology VI |
| Edited by | Lucio Salgado and Francisco Ambrozio Filho |
| Pages | 13-17 |
| DOI | 10.4028/www.scientific.net/MSF.591-593.13 |
| Citation | Agnaldo S. Gonçalves et al., 2008, Materials Science Forum, 591-593, 13 |
| Online since | August, 2008 |
| Authors | Agnaldo S. Gonçalves, Ana Flavia Nogueira, Marian R. Davolos, Naruhiko Masaki, Shozo Yanagida, Selma G. Antônio, Carlos de Oliveira Paiva-Santos |
| Keywords | Dye Sensitized Solar Cell, GZO, Nanostructured Films, ZnO:Ga |
| Abstract | ZnO has received great attention in many applications due to its electronic and optical properties. We report on the preparation of ZnO and gallium-containing ZnO (ZnO:Ga) nanoparticles by the precipitation method. The nanoparticles have the wurtzite structure and a high crystallinity. Gallium ions are present as Ga3+, as evidenced by the binding energies through XPS. Porosity and surface area of the powder increased under increasing gallium level, explained by the smaller particle size of ZnO:Ga samples compared with ZnO. The estimated optical band gap of ZnO was 3.2 eV, comparable to ZnO:Ga. |
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