Paper Title:
Ga-Modified Nanostructured ZnO: Characterization and Application in Dye-Sensitized Solar Cells
  Abstract

ZnO has received great attention in many applications due to its electronic and optical properties. We report on the preparation of ZnO and gallium-containing ZnO (ZnO:Ga) nanoparticles by the precipitation method. The nanoparticles have the wurtzite structure and a high crystallinity. Gallium ions are present as Ga3+, as evidenced by the binding energies through XPS. Porosity and surface area of the powder increased under increasing gallium level, explained by the smaller particle size of ZnO:Ga samples compared with ZnO. The estimated optical band gap of ZnO was 3.2 eV, comparable to ZnO:Ga.

  Info
Periodical
Materials Science Forum (Volumes 591-593)
Edited by
Lucio Salgado and Francisco Ambrozio Filho
Pages
13-17
DOI
10.4028/www.scientific.net/MSF.591-593.13
Citation
A. S. Gonçalves, A. F. Nogueira, M. R. Davolos, N. Masaki, S. Yanagida, S. G. Antônio, C. de O. Paiva-Santos, "Ga-Modified Nanostructured ZnO: Characterization and Application in Dye-Sensitized Solar Cells", Materials Science Forum, Vols. 591-593, pp. 13-17, 2008
Online since
August 2008
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Price
$32.00
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