Paper Title:
Reliability of SnAgCu Alloys for CMOS Image Sensor QFN Package under Thermal Cycling Loading
  Abstract

A three-dimensional finite element model of CMOS image sensor QFN packaging using ANSYS codes is developed to investigate the solder joint reliability under thermal cycle test. The predicted thermal-induced displacements were found to be very good agreement with the Moiré interferometer experimental in-plane deformations. The developed finite element model is then applied to predict fatigue life of Sn4.0Ag0.5Cu, Sn3.5Ag0.5Cu and Sn3.9Ag0.6Cu alloys based on JEDEC standard JESD22-A104. In order to save computational time and produce satisfactory results in the region of interest, an independent more finely meshed so-called submodel scheme based on cut-boundary displacement method is generated. The mesh density for different area ratio of refinery/coarse model was verified and the results were found to be good agreement with previous researches. The modified Coffin-Manson equation and strain energy density based equation are applied to evaluate the reliability of SnAgCu alloys. A series of comprehensive parametric studies were conducted in this paper.

  Info
Periodical
Edited by
Sheng-Jye Hwang and Sen-Yung Lee
Pages
175-180
DOI
10.4028/www.scientific.net/MSF.594.175
Citation
H. C. Hsu, H. Y. Lee, W. L. Shieh, "Reliability of SnAgCu Alloys for CMOS Image Sensor QFN Package under Thermal Cycling Loading", Materials Science Forum, Vol. 594, pp. 175-180, 2008
Online since
August 2008
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$32.00
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