Paper Title:
Use of the Sessile Drop Method to Understand the Behaviour of Self Healing Ceramic Matrix Composite
  Abstract

Surface and interfacial properties of borosilicate glass/ceramic systems have been investigated using the sessile drop method. The purpose is to compare and understand the reactivity of the sealing glass in C / SiC and SiC / SiC composites. A hot wall reactor has been designed to measure the variation of the contact angle and the spreading kinetic according to the temperature (500 to 1100°C) and the atmosphere (Ar, Ar + O2 and Ar + H2O). Chemical and morphological analyses underline (i) the strong reactivity between the liquid and the ceramic, (ii) the influence of the infiltration process and (iii) the strong influence of the oxidizing agent on the wetting behaviour of the glass/ceramic systems.

  Info
Periodical
Materials Science Forum (Volumes 595-598)
Edited by
Pierre Steinmetz, Ian G. Wright, Alain Galerie, Daniel Monceau and Stéphane Mathieu
Pages
1173-1180
DOI
10.4028/www.scientific.net/MSF.595-598.1173
Citation
S. Wery, F. Teyssandier, "Use of the Sessile Drop Method to Understand the Behaviour of Self Healing Ceramic Matrix Composite", Materials Science Forum, Vols. 595-598, pp. 1173-1180, 2008
Online since
September 2008
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: Kazuki Takahashi, Kanji Yasui, Maki Suemitsu, Ariyuki Kato, Yuichiro Kuroki, Masasuke Takata, Tadashi Akahane
Abstract:Gallium nitride (GaN) films were grown on SiC/Si(111) substrates by hot-mesh chemical vapor deposition (CVD) using trimethylgallium (TMG)...
261
Authors: Wlodek Strupiński, Rafał Bożek, Jolanta Borysiuk, Kinga Kościewicz, Andrzej Wysmolek, Roman Stepniewski, Jacek M. Baranowski
Abstract:The so-called “growth” of graphene was performed using a horizontal chemical vapor deposition (CVD) hot-wall reactor. In-situ etching in the...
199
Authors: Milena Beshkova, Jean Lorenzzi, Nikoletta Jegenyes, Jens Birch, Mikael Syväjärvi, Gabriel Ferro, Rositza Yakimova
Abstract:3C-SiC layers have been grown by using sublimation epitaxy at a temperature of 2000°C, on different types of on-axis 6H-SiC(0001) substrates....
183
Authors: Chien Chen Diao, Chao Chin Chan, Chia Ching Wu, Cheng Fu Yang
Abstract:“GfE Coating Materials Company” had developed a novel AZOY transparent conducting oxide (TCO) material that used ZnO as raw material and...
653
Authors: Zhi Bo Yang, Ai Ju Liu, Jiu Hua Xu
Abstract:Brazing diamond wheel was carried out via laser in an argon atmosphere. The interfacial microstructures among brazed diamond, the filler...
218