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Silicon Carbide and Related Materials 2007

Volumes 600 - 603
doi: 10.4028/www.scientific.net/MSF.600-603
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Preface

Overview

Growth of Crack-Free 100mm-Diameter 4H-SiC Crystals with Low Micropipe Densities

Authors: Masashi Nakabayashi, Tatsuo Fujimoto, Masakazu Katsuno, Noboru Ohtani, Hiroshi Tsuge, Hirokatsu Yashiro, Takashi Aigo, Taizo Hoshino, Hosei Hirano, Kohei Tatsumi

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100 mm 4HN-SiC Wafers with Zero Micropipe Density

Authors: R.T. Leonard, Y. Khlebnikov, Adrian R. Powell, C. Basceri, M.F. Brady, I. Khlebnikov, Jason R. Jenny, D.P. Malta, Michael J. Paisley, Valeri F. Tsvetkov, R. Zilli, E. Deyneka, H.McD. Hobgood, Vijay Balakrishna, Calvin H. Carter Jr.

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Investigations on Polytype Stability and Dislocation Formation in 4H-SiC Grown by PVT

Authors: Erwin Schmitt, Thomas L. Straubinger, Michael Rasp, Michael Vogel, Andreas Wohlfart

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Growth of 6H-SiC Single Crystals under Quasi-Equilibrium Conditions

Authors: Emil Tymicki, Krzysztof Grasza, Władysław Hofman, Ryszard Diduszko, Rafał Bożek

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Aluminum P-Type Doping of Bulk SiC Single Crystals by Tri-Methyl-Aluminum

Authors: Philip Hens, Ulrike Künecke, Peter Wellmann

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Growth on Rhombohedral (01-1n) Plane: An Alternative for Preparation of High Quality Bulk SiC Crystals

Authors: Octavian Filip, Boris M. Epelbaum, Juan Li, Matthias Bickermann, Xian Gang Xu, Albrecht Winnacker

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