Silicon Carbide and Related Materials 2007
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Growth of Crack-Free 100mm-Diameter 4H-SiC Crystals with Low Micropipe Densities Authors: Masashi Nakabayashi, Tatsuo Fujimoto, Masakazu Katsuno, Noboru Ohtani, Hiroshi Tsuge, Hirokatsu Yashiro, Takashi Aigo, Taizo Hoshino, Hosei Hirano, Kohei Tatsumi |
3 |
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100 mm 4HN-SiC Wafers with Zero Micropipe Density Authors: R.T. Leonard, Y. Khlebnikov, Adrian R. Powell, C. Basceri, M.F. Brady, I. Khlebnikov, Jason R. Jenny, D.P. Malta, Michael J. Paisley, Valeri F. Tsvetkov, R. Zilli, E. Deyneka, H.McD. Hobgood, Vijay Balakrishna, Calvin H. Carter Jr. |
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Investigations on Polytype Stability and Dislocation Formation in 4H-SiC Grown by PVT Authors: Erwin Schmitt, Thomas L. Straubinger, Michael Rasp, Michael Vogel, Andreas Wohlfart |
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Growth of 6H-SiC Single Crystals under Quasi-Equilibrium Conditions Authors: Emil Tymicki, Krzysztof Grasza, Władysław Hofman, Ryszard Diduszko, Rafał Bożek |
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Aluminum P-Type Doping of Bulk SiC Single Crystals by Tri-Methyl-Aluminum Authors: Philip Hens, Ulrike Künecke, Peter Wellmann |
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Authors: Octavian Filip, Boris M. Epelbaum, Juan Li, Matthias Bickermann, Xian Gang Xu, Albrecht Winnacker |
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