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Silicon Carbide and Related Materials 2007

Materials Science Forum Volumes 600 - 603

• Papers
• Abstracts

• p-4 Committees   [ 67 K ]
• p-3 Sponsors   [ 78 K ]
• p-2 Preface   [ 38 K ]
• p-1 Overview   [ 11 K ]
• p3 Growth of Crack-Free 100mm-Diameter 4H-SiC Crystals with Low Micropipe Densities   [ 2 M ]
  Authors: Masashi Nakabayashi, Tatsuo Fujimoto, Masakazu Katsuno, Noboru Ohtani, Hiroshi Tsuge, Hirokatsu Yashiro, Takashi Aigo, Taizo Hoshino, Hosei Hirano, Kohei Tatsumi
• p7 100 mm 4HN-SiC Wafers with Zero Micropipe Density   [ 1 M ]
  Authors: R.T. Leonard, Y. Khlebnikov, Adrian R. Powell, C. Basceri, M.F. Brady, I. Khlebnikov, Jason R. Jenny, D.P. Malta, Michael J. Paisley, Valeri F. Tsvetkov, R. Zilli, E. Deyneka, H.McD. Hobgood, Vijay Balakrishna, Calvin H. Carter Jr.
• p11 Investigations on Polytype Stability and Dislocation Formation in 4H-SiC Grown by PVT   [ 1000 K ]
  Authors: Erwin Schmitt, Thomas L. Straubinger, Michael Rasp, Michael Vogel, Andreas Wohlfart
• p15 Growth of 6H-SiC Single Crystals under Quasi-Equilibrium Conditions   [ 609 K ]
  Authors: Emil Tymicki, Krzysztof Grasza, Władysław Hofman, Ryszard Diduszko, Rafał Bożek
• p19 Aluminum P-Type Doping of Bulk SiC Single Crystals by Tri-Methyl-Aluminum   [ 381 K ]
  Authors: Philip Hens, Ulrike Künecke, Peter J. Wellmann
• p23 Growth on Rhombohedral (01-1n) Plane: An Alternative for Preparation of High Quality Bulk SiC Crystals   [ 3 M ]
  Authors: Octavian Filip, Boris M. Epelbaum, Juan Li, Matthias Bickermann, Xian Gang Xu, Albrecht Winnacker
• p27 Bulk SiC Crystal Growth at Constant Growth Rate Utilizing a New Design of Resistive Furnace   [ 1 M ]
  Authors: Eugene Y. Tupitsyn, Alexander Galyukov, Maxim V. Bogdanov, Alexey Kulik, Mark S. Ramm, Yuri N. Makarov, Tangali S. Sudarshan
• p31 Application of 6H to 4H Polytype Conversion to Effective Reduction of Micropipes in 4H SiC Crystals   [ 2 M ]
  Authors: Krzysztof Grasza, Emil Tymicki
• p35 Status of Large Diameter SiC Single Crystals at II-VI   [ 403 K ]
  Authors: Avinash K. Gupta, Ilya Zwieback, Andrew E. Souzis, Murugesu Yoganathan, Thomas Anderson
• p39 Occurrence of Polytype Transformation during Nitrogen Doping of SiC Bulk Wafer   [ 641 K ]
  Authors: J. Chen, S.C. Lien, Y.C. Shin, Zhe Chuan Feng, C.H. Kuan, J.H. Zhao, J.H. Zhao, Wei Jie Lu
• p43 The Observation and Explanation of Electricity Switch Phenomena in PVT Grown SiC Bulk   [ 158 K ]
  Authors: Jian Min Hao, Li Jie Wang, Bin Fen, Xiang Quan Wang, Ying Hong, Da Lei Meng, Jun Min Guo, Ru Yue Yan