Paper Title:
Self-Heating of 4H-SiC PiN Diodes at High Current Densities
  Abstract

Self-heating in high-voltage 4H-SiC PiN diodes has been studied experimentally and theoretically in dc and 8-ms single pulse modes. To simulate the self-heating, an electro-thermal model was used to calculate non-isothermal current-voltage characteristics at dc and current-time dependences at pulsed measurements. The dynamic instability of N-type was observed: the current decreases in spite of increasing of bias applied to the structure. At dc, irreversible diode degradation was found to occur at a current density of about 1700 A/cm2. Under a single current surge 8-ms pulse, the loss of thermal stability has been found at a current density of approximately 9000 A/cm2. Comparison of experimental data and simulations showed that the local temperature in the diode base at the end of the 8-ms, 9000-A/cm2 pulse reaches 2000 – 2300 K.

  Info
Periodical
Materials Science Forum (Volumes 600-603)
Edited by
Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa
Pages
1007-1010
DOI
10.4028/www.scientific.net/MSF.600-603.1007
Citation
M. E. Levinshtein, T. T. Mnatsakanov, P. A. Ivanov, J. W. Palmour, M. K. Das, B. A. Hull, "Self-Heating of 4H-SiC PiN Diodes at High Current Densities", Materials Science Forum, Vols. 600-603, pp. 1007-1010, 2009
Online since
September 2008
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