Paper Title:
Impact of RIE Etching on the Breakdown Voltage of 4H-SiC Mesa Diodes
  Abstract

This paper presents a comparison of the reverse characteristics of mesa terminated PiN diodes fabricated on n- and p-type 4H-SiC substrates. For n-type the attained breakdown voltages are higher and for p-type lower than expected. This is likely to be explained by the presence of negative charges at the interface between passivation oxide and SiC. Supported by XPS data we come to the conclusion that the RIE process creates surface charges which have an impact on the breakdown voltage of the fabricated diodes.

  Info
Periodical
Materials Science Forum (Volumes 600-603)
Edited by
Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa
Pages
1011-1014
DOI
10.4028/www.scientific.net/MSF.600-603.1011
Citation
H. Vang, S. Scharnholz, C. Raynaud, M. Lazar, G. Pâques, D. Planson, "Impact of RIE Etching on the Breakdown Voltage of 4H-SiC Mesa Diodes", Materials Science Forum, Vols. 600-603, pp. 1011-1014, 2009
Online since
September 2008
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