Paper Title:
Novel SiC Zener Diodes with High Operating Temperature of 300°C and High Power Density of 40 kW/cm2
  Abstract

This paper reports on the achievement of high-power 4H-SiC Zener diodes which have a high-doped pn junction with a large active area of 4 mm x 4 mm. The temperature coefficient of the breakdown voltage is as small as 5.7x10-5 1/K (positive) in the temperature range 20-300°C. In addition, reverse power capabilities of 6.3 kW (40 kW/cm2) at 20°C and 6.0 kW (38 kW/cm2) at 300°C during rectangular pulsed power operation (tw = 1 ms) have been achieved without device failure.

  Info
Periodical
Materials Science Forum (Volumes 600-603)
Edited by
Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa
Pages
1015-1018
DOI
10.4028/www.scientific.net/MSF.600-603.1015
Citation
R. Ishii, K. Nakayama, H. Tsuchida, Y. Sugawara, "Novel SiC Zener Diodes with High Operating Temperature of 300°C and High Power Density of 40 kW/cm2", Materials Science Forum, Vols. 600-603, pp. 1015-1018, 2009
Online since
September 2008
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Price
$32.00
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