Paper Title:
Microwave Switches and Modulators Based on 4H-SiC p-i-n Diodes
  Abstract

Multi-diode broadband microwave signal modulators based on 4H-SiC p-i-n diodes were fabricated and fully characterized. The three-diode modulators are characterized by a transmission loss of 1-2 dB and isolation of 27-34 dB in the 2-7 GHz frequency range. Two-diode modulators were specially designed for high-temperature operation. These modulators are characterized by a transmission loss of 1.1-2.6 dB and isolation of 33-44.5 dB, in the 2-7 GHz frequency range at temperatures up to 300°C.

  Info
Periodical
Materials Science Forum (Volumes 600-603)
Edited by
Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa
Pages
1019-1022
DOI
10.4028/www.scientific.net/MSF.600-603.1019
Citation
K. Zekentes, V. V. Basanets, M. S. Boltovets, V. A. Kryvutsa, V. O. Orechovskij, V. I. Simonchuk, A. V. Zorenko, L. P. Romanov, A. V. Kirillov, E. Bano, N. Camara, "Microwave Switches and Modulators Based on 4H-SiC p-i-n Diodes", Materials Science Forum, Vols. 600-603, pp. 1019-1022, 2009
Online since
September 2008
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