Paper Title:
Determination of Ambipolar Lifetime and Epilayer Thickness of 5kV SiC Bipolar Devices by Transient Switching Studies
| Periodical | Materials Science Forum (Volumes 600 - 603) |
|---|---|
| Main Theme | Silicon Carbide and Related Materials 2007 |
| Edited by | Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa |
| Pages | 1031-1034 |
| DOI | 10.4028/www.scientific.net/MSF.600-603.1031 |
| Citation | Tarek Ben Salah et al., 2008, Materials Science Forum, 600-603, 1031 |
| Online since | September, 2008 |
| Authors | Tarek Ben Salah, Samien Risaletto, Christophe Raynaud, Kamel Besbes, Dominique Bergogne, Dominique Planson, Hervé Morel |
| Keywords | Ambipolar Lifetime, Bipolar Diode, High Voltage (HV), Switching Transient |
| Price | US$ 28,- |
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Abstract
A novel experimental set-up is developed and validated to characterize high voltage diodes in transient switching mode. Parameters extracted from DMTVCA and OCVD techniques, like ambipolar lifetime, epilayer thickness and doping level, diode area, are validated in a buck converter with resistive load. The experimental set-up allows to measure the current and voltage transient characteristics without noise and influence of high parasitic wiring. Experimental results are compared with device simulations and a good correlation is found.
