Forward voltage of SiC pin diodes is evaluated by device simulation, where a p-type contact is described by Schottky barrier to a p-type surface region. The contact resistance is calculated from the comparison to I-V characteristic of Schottky structure to a p-SiC layer with a sufficiently low Schottky barrier height. Even in the relatively low contact resistance rc of 10-4 Wcm2, non-ohmic current component is observed in Schottky structure to p-SiC and the increase of forward voltage of pin diodes is fairly small. Forward voltage of pin diodes increases in the pin diodes with contact resistance rc over 10-4 Wcm2. The same behavior is also observed irrespective of a time constant of carriers, and doping concentration and thickness of a drift layer.