Paper Title:
Transient Response to High Energy Heavy Ions in 6H-SiC n+p Diodes
  Abstract

Transient currents in 6H-SiC n+p diodes and those in Si PIN diodes are compared, and the carrier dynamic response to a heavy ion collision is analyzed using Technology Computer Aided Design (TCAD). In case of 6H-SiC n+p diodes, it is found that the contribution of the ambipolar-diffusion current to total transient current is extremely weak compared to that in Si PIN diodes, since plasma disruption is accelerated by the Auger recombination process in the former.

  Info
Periodical
Materials Science Forum (Volumes 600-603)
Edited by
Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa
Pages
1039-1042
DOI
10.4028/www.scientific.net/MSF.600-603.1039
Citation
S. Onoda, T. Ohshima, T. Hirao, S. Hishiki, N. Iwamoto, K. Kojima, K. Kawano, "Transient Response to High Energy Heavy Ions in 6H-SiC n+p Diodes ", Materials Science Forum, Vols. 600-603, pp. 1039-1042, 2009
Online since
September 2008
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$32.00
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