Paper Title:
Degradation of Charge Collection Efficiency for 6H-SiC Diodes by Electron Irradiation
  Abstract

6H-SiC n+p diodes fabricated on a p-type epitaxial layer were irradiated with 1MeV-electrons at fluences up to 6×1016 cm-2 to clarify their radiation tolerance. Charge Collection Efficiencies (CCEs) were evaluated from the Transient Ion Beam Induced Current (TIBIC) using Oxygen (O) ions. The CCE of 93 % was obtained for non-electron-irradiated diodes, and no significant change in CCE was observed for diodes irradiated with electrons at fluences below 1×1015 cm-2. The degradation of CCE was observed after irradiation at fluences above 5×1015 cm-2.

  Info
Periodical
Materials Science Forum (Volumes 600-603)
Edited by
Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa
Pages
1043-1046
DOI
10.4028/www.scientific.net/MSF.600-603.1043
Citation
N. Iwamoto, S. Onoda, S. Hishiki, T. Ohshima, M. Murakami, I. Nakano, K. Kawano, "Degradation of Charge Collection Efficiency for 6H-SiC Diodes by Electron Irradiation", Materials Science Forum, Vols. 600-603, pp. 1043-1046, 2009
Online since
September 2008
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: Antonio Castaldini, Anna Cavallini, Filippo Nava, P.G. Fuochi, P. Vanni
439
Authors: Antonio Castaldini, Anna Cavallini, L. Rigutti, Filippo Nava
Abstract:The effects of irradiation with protons and electrons on 4H-silicon carbide epilayers were investigated. The particle energy was 6.5 and 8.2...
359
Authors: Takeshi Ohshima, Takahiro Satoh, Masakazu Oikawa, Shinobu Onoda, Shigeomi Hishiki, Toshio Hirao, Toshio Kamiya, T. Yokoyama, A. Sakamoto, R. Tanaka, I. Nakano, Günter Wagner, Hisayoshi Itoh
Abstract:The charge generated in 6H-SiC n+p diodes by gold (Au) ion irradiation at an energy of 12 MeV was evaluated using the Transient Ion Beam...
913
Authors: Donatella Puglisi, Gaetano Foti, Giuseppe Bertuccio
Abstract:The achievement of nuclear detectors in Silicon Carbide imposes severe constraints on the electronic quality and thickness of the material...
857
Authors: Naoya Iwamoto, Shinobu Onoda, Takeshi Ohshima, Kazutoshi Kojima, Atsushi Koizumi, Kazuo Uchida, Shinji Nozaki
Abstract:The effect of electron irradiation on the charge collection efficiency of a 6H-SiC p+n diode has been studied. The diodes were irradiated...
921