Paper Title:
1200-V, 50-A, Silicon Carbide Vertical Junction Field Effect Transistors for Power Switching Applications
  Abstract

High-voltage normally-on VJFETs of 0.19 cm2 and 0.096 cm2 areas were manufactured in seven photolithographic levels with no epitaxial regrowth and a single ion implantation event. A self aligned guard ring structure provided edge termination. At a gate bias of -36 V the 0.096 cm2 VJFET blocks 1980 V, which corresponds to 91% of the 12 μm drift layer’s avalanche breakdown voltage limit. It outputs 25 A at a forward drain voltage drop of 2 V (368 A/cm2, 735 W/cm2) and a gate current of 4 mA. The specific on-resistance is 5.4 mΩ cm2. The 0.19 cm2 VJFET blocks 1200 V at a gate bias of -26 V. It outputs 54 A at a forward drain voltage drop of 2 V (378 A/cm2, 755 W/cm2) and a gate current of 12 mA, with a specific on-resistance of 5.6 mΩ cm2. The VJFETs demonstrated low gate-to-source leakage currents with sharp onsets of avalanche breakdown.

  Info
Periodical
Materials Science Forum (Volumes 600-603)
Edited by
Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa
Pages
1047-1050
DOI
10.4028/www.scientific.net/MSF.600-603.1047
Citation
V. Veliadis, T. McNutt, M. McCoy, H. Hearne, G. De Salvo, C. Clarke, P. Potyraj, C. Scozzie, "1200-V, 50-A, Silicon Carbide Vertical Junction Field Effect Transistors for Power Switching Applications", Materials Science Forum, Vols. 600-603, pp. 1047-1050, 2009
Online since
September 2008
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Price
$32.00
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