Paper Title:
High-Temperature Operation of 50 A (1600 A/cm2), 600 V 4H-SiC Vertical-Channel JFETs for High-Power Applications
  Abstract

In this work we have demonstrated the high-temperature operations of 600 V/50 A 4HSiC vertical-channel junction field-effect transistors (VJFETs) with an active area of 3 mm2. Specific-on resistance (RONSP) in the linear region of a single die is less than 2.6 mW.cm2 while the drain-source current is over 50 A under a gate bias (VGS) of 3 V. A reverse blocking gain of 54 is obtained at gate bias ranging from -13 V to -23 V and drain-source leakage current (IRDS) of 200 μA. To demonstrate the use of SiC VJFETs for high-power applications, eight 3 mm2 SiC VJFETs are bonded in a high current 600-V module. RONSP in the linear region of these eight-paralleled SiC VJFETs is 2.8 mW.cm2 at room temperature and increased to 5.35 mW.cm2 at an ambient temperature of 175 °C in air, corresponding to a shift of 0.61%/°C from room temperature to 175 °C. Meanwhile, the forward current is over 360 A at room temperature and reduces to 188 A at 175 °C at drain-source bias (VDS) of 5.25 V and VGS of 3 V.

  Info
Periodical
Materials Science Forum (Volumes 600-603)
Edited by
Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa
Pages
1055-1058
DOI
10.4028/www.scientific.net/MSF.600-603.1055
Citation
L. Cheng, I. Sankin, V. Bondarenko, M. S. Mazzola, J. D. Scofield, D. C. Sheridan, P. Martin, J. R. B. Casady, J. B. Casady, "High-Temperature Operation of 50 A (1600 A/cm2), 600 V 4H-SiC Vertical-Channel JFETs for High-Power Applications", Materials Science Forum, Vols. 600-603, pp. 1055-1058, 2009
Online since
September 2008
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: K. Dynefors, V. Desmaris, Joakim Eriksson, Per Åke Nilsson, Niklas Rorsman, Herbert Zirath
1125
Authors: X. Zhang, Seo Young Ha, M. Benamara, Marek Skowronski, Joseph J. Sumakeris, Sei Hyung Ryu, Michael J. Paisley, Michael J. O'Loughlin
Abstract:Structure of the “carrot” defects in 4H-SiC homoepitaxial layers deposited by CVD has been investigated by plan-view and cross-sectional...
327
Authors: Zhen Bing Cai, Min Hao Zhu, Xiu Zhou Lin, Ji Liang Mo, Zhong Rong Zhou
Abstract:Nickel base Ni60 and cobalt base Co-Cr-W coatings were prepared on substrate of refractory alloy steel 4Cr14NiW2Mo by laser-cladding...
878
Authors: Keishi Yamaguchi, Mutsumi Touge, Takayuki Nakano, Junji Watanabe
Abstract:Silicon carbide (SiC) single crystal has many advantages comparing with silicon single crystal, such as wide band-gap, hardness and various...
282
Authors: Xing Bing Ma, Hong Xing Zheng
Chapter 6: Communication and Network
Abstract:A wide-band antenna coupling with an elliptical slot was discussed in this paper. To implement the wide band operation, an elliptical ring...
1594