Paper Title:
Normally-Off 4H-SiC Vertical JFET with Large Current Density
  Abstract

We developed normally-off 4H-SiC vertical junction field effect transistors (JFETs) with large current density. The effect of forming an abrupt junction between the gate and the channel was simulated, and vertical JFETs were then fabricated with abrupt junctions. As a result, a large rated drain current density (500 A/cm2) and a low specific on-resistance (2.0 mWcm2) were achieved for small devices. The blocking voltage was 600 V. These results were due to a reduction of the threshold voltage by forming the abrupt junction between the gate and the channel.

  Info
Periodical
Materials Science Forum (Volumes 600-603)
Edited by
Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa
Pages
1059-1062
DOI
10.4028/www.scientific.net/MSF.600-603.1059
Citation
H. Shimizu, Y. Onose, T. Someya, H. Onose, N. Yokoyama, "Normally-Off 4H-SiC Vertical JFET with Large Current Density", Materials Science Forum, Vols. 600-603, pp. 1059-1062, 2009
Online since
September 2008
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Price
$32.00
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