Paper Title:
Silicon Carbide Vertical JFET Operating at High Temperature
  Abstract

Trenched and implanted vertical JFETs (TI-VJFETs) with blocking voltages of 700 V were fabricated on commercial 4H-SiC epitaxial wafers. Vertical p+-n junctions were formed by aluminium implantation in sidewalls of strip-like mesa structures. Normally-on 4H-SiC TI-VJFETs had specific on-state resistance (RO-S ) of 8 mW×cm2 measured at room temperature. These devices operated reversibly at a current density of 100 A/cm2 whilst placed on a hot stage at temperature of 500 °C and without any protective atmosphere. The change of RO-S with temperature rising from 20 to 500 °C followed a power law (~ T 2.4) which is close to the temperature dependence of electron mobility in 4H-SiC.

  Info
Periodical
Materials Science Forum (Volumes 600-603)
Edited by
Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa
Pages
1063-1066
DOI
10.4028/www.scientific.net/MSF.600-603.1063
Citation
K. Vassilevski, K. P. Hilton, N. G. Wright, M. J. Uren, A.G. Munday, I. P. Nikitina, A.J. Hydes, A. B. Horsfall, C. M. Johnson, "Silicon Carbide Vertical JFET Operating at High Temperature", Materials Science Forum, Vols. 600-603, pp. 1063-1066, 2009
Online since
September 2008
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