Paper Title:
Switching Performance of Epitaxially Grown Normally-Off 4H-SiC JFET
  Abstract

Static and dynamic behavior of the epitaxially grown dual gate trench 4H-SiC junction field effect transistor (JFET) is investigated. Typical on-state resistance Ron was 6 – 10mΩcm2 at VGS = 2.5V and the breakdown voltage between the range of 1.5 – 1.8kV was realized at VGS = −5V for normally-off like JFETs. It was found that the turn-on energy delivers the biggest part of the switching losses. The dependence of switching losses from gate resistor is nearly linear, suggesting that changing the gate resistor, a way similar to Si-IGBT technology, can easily control di/dt and dv/dt. Turn-on losses at 200°C are lower compared to those at 25°C, which indicates the influence of the high internal p-type gate layer resistance. Inductive switching numerical analysis suggested the strong influence of channel doping conditions on the turn-on switching performance. The fast switching normally-off JFET devices require heavily doped narrow JFET channel design.

  Info
Periodical
Materials Science Forum (Volumes 600-603)
Edited by
Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa
Pages
1067-1070
DOI
10.4028/www.scientific.net/MSF.600-603.1067
Citation
R. K. Malhan, S.J. Rashid, M. Kataoka, Y. Takeuchi, N. Sugiyama, F. Udrea, G.A.J. Amaratunga, T. Reimann, "Switching Performance of Epitaxially Grown Normally-Off 4H-SiC JFET", Materials Science Forum, Vols. 600-603, pp. 1067-1070, 2009
Online since
September 2008
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