Homoepitaxial Growth of 4H-SiC on On-Axis Si-Face Substrates Using Chloride-Based CVD |
|
| Journal | Materials Science Forum (Volumes 600 - 603) |
|---|---|
| Volume | Silicon Carbide and Related Materials 2007 |
| Edited by | Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa |
| Pages | 107-110 |
| DOI | 10.4028/www.scientific.net/MSF.600-603.107 |
| Citation | Stefano Leone et al., 2008, Materials Science Forum, 600-603, 107 |
| Online since | September, 2008 |
| Authors | Stefano Leone, Henrik Pedersen, Anne Henry, Olof Kordina, Erik Janzén |
| Keywords | Chloride-Based CVD Growth, Epilayer, High Growth Rate, On-Axis, Si-Face |
| Abstract | The homoepitaxial chloride-based CVD growth is demonstrated on Si-face on-axis 4H-SiC substrates. The use of chloride-based CVD has allowed growth of 100% 4H-SiC epitaxial layers with a growth rate of 20µm/h, thus about seven times higher than with standard precursors. It was also found that chlorine etches preferentially the 3C-SiC inclusions that tends to nucleate on Si-face on-axis substrates. Therefore the Cl/Si ratio is a fundamental process parameter to optimize. |
| Full Paper | 
Get the full paper by clicking here
|
First page example
