Paper Title:
Homoepitaxial Growth of 4H-SiC on On-Axis Si-Face Substrates Using Chloride-Based CVD
  Abstract

The homoepitaxial chloride-based CVD growth is demonstrated on Si-face on-axis 4H-SiC substrates. The use of chloride-based CVD has allowed growth of 100% 4H-SiC epitaxial layers with a growth rate of 20µm/h, thus about seven times higher than with standard precursors. It was also found that chlorine etches preferentially the 3C-SiC inclusions that tends to nucleate on Si-face on-axis substrates. Therefore the Cl/Si ratio is a fundamental process parameter to optimize.

  Info
Periodical
Materials Science Forum (Volumes 600-603)
Edited by
Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa
Pages
107-110
DOI
10.4028/www.scientific.net/MSF.600-603.107
Citation
S. Leone, H. Pedersen, A. Henry, O. Kordina, E. Janzén, "Homoepitaxial Growth of 4H-SiC on On-Axis Si-Face Substrates Using Chloride-Based CVD ", Materials Science Forum, Vols. 600-603, pp. 107-110, 2009
Online since
September 2008
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