Paper Title:
1270V, 1.21mΩ·cm2 SiC Buried Gate Static Induction Transistors (SiC-BGSITs)
  Abstract

We have succeeded to fabricate SiC buried gate static induction transistors (BGSITs) with the breakdown voltage VBR of 1270 V at the gate voltage VGS of –12 V and the specific on-resistance RonS of 1.21 mΩ·cm2 at VGS = 2.5 V. The turn-off behaviors of BGSITs strongly depend on the source length WS, which is the distance between the gate electrodes. The rise time tr of BGSIT for WS = 1,070 μm is 395 nsec, while that for WS = 210 μm is 70nsec. From the 3D computer simulations, we confirmed that the difference in turn-off behavior came from the time delay in potential barrier formation in channel region because of high p+ gate resistivity. The turn-off behaviors also depend on the operation temperature, especially for long WS. On the other hand, the turn-on behaviors hardly depend on the WS and temperature.

  Info
Periodical
Materials Science Forum (Volumes 600-603)
Edited by
Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa
Pages
1071-1074
DOI
10.4028/www.scientific.net/MSF.600-603.1071
Citation
Y. Tanaka, K. Yano, M. Okamoto, A. Takatsuka, K. Arai, T. Yatsuo, "1270V, 1.21mΩ·cm2 SiC Buried Gate Static Induction Transistors (SiC-BGSITs)", Materials Science Forum, Vols. 600-603, pp. 1071-1074, 2009
Online since
September 2008
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