Paper Title:
Three Dimensional Analysis of Turnoff Operation of SiC Buried Gate Static Induction Transistors (BG-SITs)
  Abstract

The turnoff mechanism of SiC buried gate static induction transistors (SiC-BGSITs) were analyzed by three dimensional device simulation. A current crowding occurs in the portion near the channel center away from the gate contact during the initial phase of the turnoff operation, which is resulted from a non-uniform potential distribution through the gate finger with the displacement current flowing there. This increases the turnoff delay time. The impact of source length on the turnoff performance was made clear.

  Info
Periodical
Materials Science Forum (Volumes 600-603)
Edited by
Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa
Pages
1075-1078
DOI
10.4028/www.scientific.net/MSF.600-603.1075
Citation
K. Yano, Y. Tanaka, T. Yatsuo, A. Takatsuka, M. Okamoto, K. Arai, "Three Dimensional Analysis of Turnoff Operation of SiC Buried Gate Static Induction Transistors (BG-SITs) ", Materials Science Forum, Vols. 600-603, pp. 1075-1078, 2009
Online since
September 2008
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