Paper Title:
Fabrication and Testing of 6H-SiC JFETs for Prolonged 500 °C Operation in Air Ambient
  Abstract

This paper reports on the fabrication and testing of 6H-SiC junction field effect transistors (JFETs) and a simple differential amplifier integrated circuit that have demonstrated 2000 hours of electrical operation at 500 °C without degradation. The high-temperature ohmic contacts, dielectric passivation, and packaging technology that enabled such 500 °C durability are briefly described. Key JFET parameters of threshold voltage, on-state resistance, transconductance, and on-state current, as well as the gain of the differential amplifier integrated circuit, exhibited less than 7% change over the first 2000 hours of 500 °C operational testing.

  Info
Periodical
Materials Science Forum (Volumes 600-603)
Edited by
Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa
Pages
1079-1082
DOI
10.4028/www.scientific.net/MSF.600-603.1079
Citation
D. J. Spry, P. G. Neudeck, L. Y. Chen, G. M. Beheim, R. S. Okojie, C. W. Chang, R. D. Meredith, T. L. Ferrier, L. J. Evans, "Fabrication and Testing of 6H-SiC JFETs for Prolonged 500 °C Operation in Air Ambient", Materials Science Forum, Vols. 600-603, pp. 1079-1082, 2009
Online since
September 2008
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Price
$32.00
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