Paper Title:
Silicon Carbide Differential Amplifiers for High-Temperature Sensing
| Periodical | Materials Science Forum (Volumes 600 - 603) |
|---|---|
| Main Theme | Silicon Carbide and Related Materials 2007 |
| Edited by | Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa |
| Pages | 1083-1086 |
| DOI | 10.4028/www.scientific.net/MSF.600-603.1083 |
| Citation | Amita Patil et al., 2008, Materials Science Forum, 600-603, 1083 |
| Online since | September, 2008 |
| Authors | Amita Patil, Xiao An Fu, Philip G. Neudeck, Glenn M. Beheim, Mehran Mehregany, Steven Garverick |
| Keywords | Differential Amplifier, High Temperature Electronics, Junction Field Effect Transistor, Sensor Interface Circuits, Silicon Carbide Electronics |
| Price | US$ 28,- |
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Abstract
This paper presents silicon carbide sensor interface circuits and techniques for MEMSbased sensors operating in harsh environments. More specifically, differential amplifiers were constructed using integrated, depletion-mode, n-channel, 6H-SiC JFETs and off-chip passive components. A three-stage voltage amplifier has a differential voltage gain of ~50 dB and a gainbandwidth of ~200 kHz at 450oC, as limited by test parasitics. Such an amplifier could be used to amplify the signals produced by a piezoresistive Wheatstone bridge sensor, for example. Design considerations for 6H-SiC JFET transimpedance amplifiers appropriate for capacitance sensing and for frequency readout from a micromechanical resonator are also presented.
