Paper Title:
Silicon Carbide Differential Amplifiers for High-Temperature Sensing
  Abstract

This paper presents silicon carbide sensor interface circuits and techniques for MEMSbased sensors operating in harsh environments. More specifically, differential amplifiers were constructed using integrated, depletion-mode, n-channel, 6H-SiC JFETs and off-chip passive components. A three-stage voltage amplifier has a differential voltage gain of ~50 dB and a gainbandwidth of ~200 kHz at 450oC, as limited by test parasitics. Such an amplifier could be used to amplify the signals produced by a piezoresistive Wheatstone bridge sensor, for example. Design considerations for 6H-SiC JFET transimpedance amplifiers appropriate for capacitance sensing and for frequency readout from a micromechanical resonator are also presented.

  Info
Periodical
Materials Science Forum (Volumes 600-603)
Edited by
Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa
Pages
1083-1086
DOI
10.4028/www.scientific.net/MSF.600-603.1083
Citation
A. Patil, X. A. Fu, P. G. Neudeck, G. M. Beheim, M. Mehregany, S. Garverick, "Silicon Carbide Differential Amplifiers for High-Temperature Sensing ", Materials Science Forum, Vols. 600-603, pp. 1083-1086, 2009
Online since
September 2008
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Price
$32.00
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