Development of High Temperature Lateral HV and LV JFETs in 4H-SiC
| Periodical | Materials Science Forum (Volumes 600 - 603) |
|---|---|
| Main Theme | Silicon Carbide and Related Materials 2007 |
| Edited by | Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa |
| Pages | 1091-1094 |
| DOI | 10.4028/www.scientific.net/MSF.600-603.1091 |
| Citation | Y. Zhang et al., 2008, Materials Science Forum, 600-603, 1091 |
| Online since | September, 2008 |
| Authors | Y. Zhang, Kuang Sheng, Ming Su, Jian H. Zhao, Petre Alexandrov, Leonid Fursin |
| Keywords | High Temperature, JFET, Power Integrated Circuits, Silicon Carbide (SiC) |
| Price | US$ 28,- |
A series of high voltage (HV) and low voltage (LV) lateral JFETs are successfully developed in 4H-SiC based on the vertical channel LJFET (VC-LJFET) device platform. Both room temperature and 300 oC characterizations are presented. The HV JFET shows a specific-on resistance of 12.8 mΩ·cm2 and is capable of conducting current larger than 3 A at room temperature. A threshold voltage drop of about 0.5 V for HV and LV JFETs is observed when temperature varies from room temperature to 300 oC. The measured increase of specific-on resistance with temperature due to a reduction of electron mobility agrees with the numerical prediction. The first demonstration of SiC power integrated circuits (PIC) is also reported, which shows 5 MHz switching at VDS of 200 V and on-state current of 0.4 A.
