Paper Title:

6H-SiC Lateral JFETs for Analog Integrated Circuits

Periodical Materials Science Forum (Volumes 600 - 603)
Main Theme Silicon Carbide and Related Materials 2007
Edited by Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa
Pages 1099-1102
DOI 10.4028/www.scientific.net/MSF.600-603.1099
Citation Xiao An Fu et al., 2008, Materials Science Forum, 600-603, 1099
Online since September, 2008
Authors Xiao An Fu, Amita Patil, Philip G. Neudeck, Glenn M. Beheim, Steven Garverick, Mehran Mehregany
Keywords 6H-SiC, Device Fabrication, Device Physic, High Temperature Electronics, JFET
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Abstract

This paper reports fabrication and electrical characterization of 6H-SiC n-channel, depletion-mode, junction-field-effect transistors (JFETs) for use in high-temperature analog integrated circuits for sensing and control in propulsion, power systems, and geothermal exploration. Electrical characteristics of the resulting JFET devices have been measured across the wafer as a function of temperature, from room temperature to 450oC. The results indicate that the JFETs are suitable for high-gain amplifiers in high-temperature sensor signal processing circuits.