6H-SiC Lateral JFETs for Analog Integrated Circuits
| Periodical | Materials Science Forum (Volumes 600 - 603) |
|---|---|
| Main Theme | Silicon Carbide and Related Materials 2007 |
| Edited by | Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa |
| Pages | 1099-1102 |
| DOI | 10.4028/www.scientific.net/MSF.600-603.1099 |
| Citation | Xiao An Fu et al., 2008, Materials Science Forum, 600-603, 1099 |
| Online since | September, 2008 |
| Authors | Xiao An Fu, Amita Patil, Philip G. Neudeck, Glenn M. Beheim, Steven Garverick, Mehran Mehregany |
| Keywords | 6H-SiC, Device Fabrication, Device Physic, High Temperature Electronics, JFET |
| Price | US$ 28,- |
This paper reports fabrication and electrical characterization of 6H-SiC n-channel, depletion-mode, junction-field-effect transistors (JFETs) for use in high-temperature analog integrated circuits for sensing and control in propulsion, power systems, and geothermal exploration. Electrical characteristics of the resulting JFET devices have been measured across the wafer as a function of temperature, from room temperature to 450oC. The results indicate that the JFETs are suitable for high-gain amplifiers in high-temperature sensor signal processing circuits.