Paper Title:
Influence of Passivation Oxide Properties on SiC Field-Plated Buried Gate MESFETs
  Abstract

Silicon Carbide MESFETs for microwave frequencies were made using a field-plated buried gate approach. The devices were fabricated using passivation oxides with different interface trap densities. By using a passivation oxide with a reduced interface trap density, grown in a sodium containing ambient, it was possible to achieve a very high continous wave output power density of the device: 8 W/mm at 3 GHz and 1 dB compression.

  Info
Periodical
Materials Science Forum (Volumes 600-603)
Edited by
Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa
Pages
1103-1106
DOI
10.4028/www.scientific.net/MSF.600-603.1103
Citation
P. Å. Nilsson, M. Sudow, F. Allerstam, K. Andersson, E. Ö. Sveinbjörnsson, H. Hjelmgren, N. Rorsman, "Influence of Passivation Oxide Properties on SiC Field-Plated Buried Gate MESFETs", Materials Science Forum, Vols. 600-603, pp. 1103-1106, 2009
Online since
September 2008
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$32.00
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