Paper Title:
Measurement of Local Temperatures Using µ-Raman of SiC and AlGaN-GaN/SiC Power and RF Devices
  Abstract

Confocal μ-Raman was used to measure the operating temperatures in SiC MESFETS, AlGaN/GaN/SiC HEMT’s and 4H-SiC PiN diodes. Temperatures obtained from thermal imaging of the MESFETS compared well with those measured from Raman scattering. Operating temperatures were also obtained for large area PiN diode and it was shown that a single point at the center of the device can be used to measure the average temperature.

  Info
Periodical
Materials Science Forum (Volumes 600-603)
Edited by
Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa
Pages
1111-1114
DOI
10.4028/www.scientific.net/MSF.600-603.1111
Citation
O. J. Glembocki, J. D. Caldwell, J. A. Mittereder, J. P. Calame, S. C. Binari, R. E. Stahlbush, "Measurement of Local Temperatures Using µ-Raman of SiC and AlGaN-GaN/SiC Power and RF Devices", Materials Science Forum, Vols. 600-603, pp. 1111-1114, 2009
Online since
September 2008
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$32.00
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