Paper Title:
Normally-Off 4H-SiC Power MOSFET with Submicron Gate
  Abstract

In order for SiC-MOSFET to be practical in various power electronics applications, low specific on-resistance Ron,sp, high breakdown voltage and “normally-off” characteristics have to be fulfilled even at high temperature. We fabricated a SiC-MOSFET employing a submicron gate with channel length Lg of 0.5μm by a self-aligned implantation and aδ-doped epitaxial channel layer to successfully demonstrate the following features. The normally-off characteristics was confirmed from room temperature to 200°C where the therethold voltages Vth were 2.9V at room temperature and 1.6V at 200°C, respectively. The Ron,sp were 4.6mΩcm2 at room temperature and 9.2mΩcm2 at 200°C, respectively, while the breakdown voltage was greater than 1400V .

  Info
Periodical
Materials Science Forum (Volumes 600-603)
Edited by
Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa
Pages
1115-1118
DOI
10.4028/www.scientific.net/MSF.600-603.1115
Citation
K. Yamashita, K. Egashira, K. Hashimoto, K. Takahashi, O. Kusumoto, K. Utsunomiya, M. Hayashi, M. Uchida, C. Kudo, M. Kitabatake, S. Hashimoto, "Normally-Off 4H-SiC Power MOSFET with Submicron Gate", Materials Science Forum, Vols. 600-603, pp. 1115-1118, 2009
Online since
September 2008
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$32.00
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