(11-20) Face Channel MOSFET with Low On-Resistance |
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| Journal | Materials Science Forum (Volumes 600 - 603) |
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| Volume | Silicon Carbide and Related Materials 2007 |
| Edited by | Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa |
| Pages | 1119-1122 |
| DOI | 10.4028/www.scientific.net/MSF.600-603.1119 |
| Citation | Eiichi Okuno et al., 2008, Materials Science Forum, 600-603, 1119 |
| Online since | September, 2008 |
| Authors | Eiichi Okuno, Takeshi Endo, Jun Kawai, Toshio Sakakibara, Shoichi Onda |
| Keywords | (11-20), Channel Mobility, Dangling Bond, Hydrogen Termination, Low Resistance, Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET) |
| Abstract | We have investigated the techniques to improve the channel mobility of SiC MOSFETs and found that the hydrogen termination of dangling bonds at a MOS interface is very effective in improving the channel mobility, particularly that of the interface fabricated on a (11-20) face wafer. A high channel mobility of MOSFET on the (11-20) face was achieved to 244cm2/Vs by new process which can terminate dangling bonds by hydrogen. The vertical MOSFET, which is prepared using this process, has a low on-resistance of 5.7 mΩcm2 and a breakdown voltage of 1100 V. The channel resistance is estimated at 0.58 mΩcm2. |
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