Paper Title:
(11-20) Face Channel MOSFET with Low On-Resistance
  Abstract

We have investigated the techniques to improve the channel mobility of SiC MOSFETs and found that the hydrogen termination of dangling bonds at a MOS interface is very effective in improving the channel mobility, particularly that of the interface fabricated on a (11-20) face wafer. A high channel mobility of MOSFET on the (11-20) face was achieved to 244cm2/Vs by new process which can terminate dangling bonds by hydrogen. The vertical MOSFET, which is prepared using this process, has a low on-resistance of 5.7 mΩcm2 and a breakdown voltage of 1100 V. The channel resistance is estimated at 0.58 mΩcm2.

  Info
Periodical
Materials Science Forum (Volumes 600-603)
Edited by
Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa
Pages
1119-1122
DOI
10.4028/www.scientific.net/MSF.600-603.1119
Citation
E. Okuno, T. Endo, J. Kawai, T. Sakakibara, S. Onda, "(11-20) Face Channel MOSFET with Low On-Resistance", Materials Science Forum, Vols. 600-603, pp. 1119-1122, 2009
Online since
September 2008
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Price
$32.00
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