Paper Title:
Investigation into Short-Circuit Ruggedness of 1.2 kV 4H-SiC MOSFETs
  Abstract

The shout-circuit ruggedness of prototype 1.2kV SiC MOSFETs has been investigated. The short-circuit measurements were carried out at 25 °C and 125 °C with a dc bus voltage of 800 V and an on/off state gate voltage of +20/-10 V. The small difference in tfail between 25 °C and 125 °C indicates that the destructive breakdown occurs at temperatures much higher than 125 °C. The temperature at destructive breakdown estimated from the Wunsch-Bell formula is about 1400 °C. At such high temperatures, intrinsic carriers are increased markedly and generated heat leads to the destructive breakdown. tfail of all the SiC-MOSFETs studied is longer than 10 μs, meaning that the short-circuit ruggedness satisfies system requirements. These results show that the SiC-MOSFETs are promising for power electronics applications.

  Info
Periodical
Materials Science Forum (Volumes 600-603)
Edited by
Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa
Pages
1123-1126
DOI
10.4028/www.scientific.net/MSF.600-603.1123
Citation
Y. Nakao, S. Watanabe, N. Miura, M. Imaizumi, T. Oomori, "Investigation into Short-Circuit Ruggedness of 1.2 kV 4H-SiC MOSFETs ", Materials Science Forum, Vols. 600-603, pp. 1123-1126, 2009
Online since
September 2008
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