Paper Title:
Effect of Recombination-Induced Stacking Faults on Majority Carrier Conduction and Reverse Leakage Current on 10 kV SiC DMOSFETs
  Abstract

This paper presents the effect of recombination-induced stacking faults on the drift based forward conduction and leakage currents of high voltage 4H-SiC power devices. To show the effects, IV characteristics of a 4H-SiC 10 kV DMOSFET and a 4H-SiC 4 kV BJT have been evaluated before and after the induction of stacking faults in the drift epilayer. For both devices, significant increases in forward voltage drops, as well as marked increases in leakage currents have been observed. The results suggest that injection of minority carriers in majority carrier devices should be avoided at all times.

  Info
Periodical
Materials Science Forum (Volumes 600-603)
Edited by
Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa
Pages
1127-1130
DOI
10.4028/www.scientific.net/MSF.600-603.1127
Citation
S. H. Ryu, F. Husna, S. K. Haney, Q. C. J. Zhang, R. E. Stahlbush, A. K. Agarwal, "Effect of Recombination-Induced Stacking Faults on Majority Carrier Conduction and Reverse Leakage Current on 10 kV SiC DMOSFETs ", Materials Science Forum, Vols. 600-603, pp. 1127-1130, 2009
Online since
September 2008
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: Anant K. Agarwal, Sumi Krishnaswami, Jim Richmond, Craig Capell, Sei Hyung Ryu, John W. Palmour, Bruce Geil, Dimos Katsis, Charles Scozzie, Robert E. Stahlbush
Abstract:SiC BJTs show instability in the I-V characteristics after as little as 15 minutes of operation. The current gain reduces, the on-resistance...
1409
Authors: Hyung Seok Lee, Martin Domeij, Carl Mikael Zetterling, Mikael Östling
Abstract:4H-SiC BJTs have been fabricated with varying geometrical designs. The maximum value of the current gain was about 30 at IC=85 mA, VCE=14 V...
767
Authors: Jian Hui Zhang, Petre Alexandrov, Jian H. Zhao
Abstract:This paper reports a newly achieved best result on the common emitter current gain of 4H-SiC high power bipolar junction transistors (BJTs)....
1155
Authors: Q. Jon Zhang, Charlotte Jonas, Albert A. Burk, Craig Capell, Jonathan Young, Robert Callanan, Anant K. Agarwal, John W. Palmour, Bruce Geil, Charles Scozzie
Abstract:4H-SiC BJTs with a common emitter current gain (b) of 108 at 25°C have been demonstrated. The high current gain was accomplished by using a...
1159
Authors: Benedetto Buono, Fredrik Allerstam, Martin Domeij, Andrei Konstantinov, Krister Gumaelius, Hrishikesh Das, Thomas Neyer
Chapter 5: Devices and Circuits
Abstract:In this work, large area SiC BJTs with good long-term stability in 1000 hrs DC stress tests are demonstrated. It is also illustrated how...
1017