Paper Title:
950 Volt 4H-SiC MOSFETs: DC and Transient Performance and Gate Oxide Reliability
  Abstract

SiC vertical MOSFETs were fabricated and characterized to achieve a blocking voltage of 950 Volts and a specific on-resistance of 8.4 mW-cm2. Extrapolations of time-dependent dielectric breakdown measurements versus applied electric field indicate that the gate oxide mean-time to failure is approximately 105 hours at 250°C.

  Info
Periodical
Materials Science Forum (Volumes 600-603)
Edited by
Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa
Pages
1131-1134
DOI
10.4028/www.scientific.net/MSF.600-603.1131
Citation
K. Matocha, Z. Stum, S. Arthur, G. Dunne, L. Stevanovic, "950 Volt 4H-SiC MOSFETs: DC and Transient Performance and Gate Oxide Reliability ", Materials Science Forum, Vols. 600-603, pp. 1131-1134, 2009
Online since
September 2008
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