Paper Title:
Comparison of 10 kV 4H-SiC Power MOSFETs and IGBTs for High Frequency Power Conversion
  Abstract

For the first time, large area 10 kV SiC power devices are being produced capable of yielding power modules for high-frequency megawatt power conversion. To this end, the switching performance and power dissipation of silicon carbide (SiC) n-channel IGBTs and MOSFETs are evaluated using numerical simulations software over an extended current range to determine the best device suitable for 10 kV applications. Each device is also optimized for minimal forward voltage drop in the on-state.

  Info
Periodical
Materials Science Forum (Volumes 600-603)
Edited by
Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa
Pages
1139-1142
DOI
10.4028/www.scientific.net/MSF.600-603.1139
Citation
G. G. Walden, T. McNutt, M. Sherwin, S. Van Campen, R. Singh, R. Howell, "Comparison of 10 kV 4H-SiC Power MOSFETs and IGBTs for High Frequency Power Conversion", Materials Science Forum, Vols. 600-603, pp. 1139-1142, 2009
Online since
September 2008
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: Sei Hyung Ryu, Sumi Krishnaswami, Mrinal K. Das, Jim Richmond, Anant K. Agarwal, John W. Palmour, James D. Scofield
Abstract:Due to the high critical field in 4H-SiC, the drain charge and switching loss densities in a SiC power device are approximately 10X higher...
797
Authors: Lin Cheng, Janna R. B. Casady, Michael S. Mazzola, V. Bondarenko, Robin L. Kelley, Igor Sankin, J. Neil Merrett, Jeff B. Casady
Abstract:In this work we have demonstrated the operation of 600-V class 4H-SiC vertical-channel junction field-effect transistors (VJFETs) with...
1183
Authors: Steven L. Kaplan, Aderinto Ogunniyi
Abstract:Continued improvement in silicon carbide (SiC) material processing has allowed development of efficient high temperature devices which are...
1167
Authors: Kazuhiro Fujikawa, Kenichi Sawada, Hitoki Tokuda, Hideto Tamaso, Shin Harada, Jiro Shinkai, Takashi Tsuno, Yasuo Namikawa
Abstract:400V/2.5A 4H-SiC JFETs having a reduced surface field (RESURF) structure were fabricated. Measurements on the on-resistance, blocking and...
727
Authors: Siddharth Potbhare, Neil Goldsman, Akin Akturk, Aivars J. Lelis
Abstract:We present detailed mixed-mode simulations of a DC-DC converter based on 4H-SiC DMOSFETs. The mixed-mode modeling enables the use of complex...
1163