Paper Title:
Temperature and Time Dependent Threshold Voltage Instability in 4H-SiC Power DMOSFET Devices
  Abstract

Threshold voltage (Vth) was measured on 4H-SiC power DMOSFET devices as a function of temperature, gate stress, and gate stress time. Vth varied linearly with gate stress and gate stress time and inversely with temperature. This instability is explained with the trapping rate of channel electrons at or near the SiO2-SiC interface. Since the measurement scale of Vth is large in this case (it takes approx. 20 s to measure Vth), it is assumed that fast interface traps, i.e., ones closer to the interface, are already filled and do not contribute to the shift in Vth. Comparison with theoretical calculations shows the rate of carrier detrapping becomes higher with temperature and as a result the measured value of Vth approaches the theoretical value.

  Info
Periodical
Materials Science Forum (Volumes 600-603)
Edited by
Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa
Pages
1147-1150
DOI
10.4028/www.scientific.net/MSF.600-603.1147
Citation
M. J. Tadjer, K. D. Hobart, E. A. Imhoff, F. J. Kub, "Temperature and Time Dependent Threshold Voltage Instability in 4H-SiC Power DMOSFET Devices", Materials Science Forum, Vols. 600-603, pp. 1147-1150, 2009
Online since
September 2008
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$32.00
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