Paper Title:
Very High Growth Rate of 4H-SiC Using MTS as Chloride-Based Precursor
  Abstract

The chlorinated precursor methyltrichlorosilane (MTS), CH3SiCl3, has been used to grow epitaxial layers of 4H-SiC in a hot wall CVD reactor, with growth rates as high as 170 µm/h at 1600°C. Since MTS contains both silicon and carbon, with the C/Si ratio 1, MTS was used both as single precursor and mixed with silane or ethylene to study the effect of the C/Si and Cl/Si ratios on growth rate and doping of the epitaxial layers. When using only MTS as precursor, the growth rate showed a linear dependence on the MTS molar fraction in the reactor up to about 100 µm/h. The growth rate dropped for C/Si < 1 but was constant for C/Si > 1. Further, the growth rate decreased with lower Cl/Si ratio.

  Info
Periodical
Materials Science Forum (Volumes 600-603)
Edited by
Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa
Pages
115-118
DOI
10.4028/www.scientific.net/MSF.600-603.115
Citation
H. Pedersen, S. Leone, A. Henry, F. C. Beyer, V. Darakchieva, E. Janzén, "Very High Growth Rate of 4H-SiC Using MTS as Chloride-Based Precursor ", Materials Science Forum, Vols. 600-603, pp. 115-118, 2009
Online since
September 2008
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