Paper Title:
1200 V 4H-SiC BJTs with a Common Emitter Current Gain of 60 and Low On-Resistance
  Abstract

This paper reports a 4H-SiC bipolar junction transistor (BJT) with a breakdown voltage (BVCEO) of 1200 V, a maximum current gain (β) of 60 and the low on-resistance (Rsp_on)of 5.2 mΩcm2. The high gain is attributed to an improved surface passivation SiO2 layer which was grown in N2O ambient in a diffusion furnace. The SiC BJTs with passivation oxide grown in N2O ambient show less emitter size dependence than reference SiC BJTs, with conventional SiO2 passivation, due to a reduced surface recombination current. SiC BJT devices with an active area of 1.8 mm × 1.8 mm showed a current gain of 53 in pulsed mode and a forward voltage drop of VCE=2V at IC=15 A (JC=460 A/cm2).

  Info
Periodical
Materials Science Forum (Volumes 600-603)
Edited by
Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa
Pages
1151-1154
DOI
10.4028/www.scientific.net/MSF.600-603.1151
Citation
H. S. Lee, M. Domeij, C. M. Zetterling, R. Ghandi, M. Östling, F. Allerstam, E. Ö. Sveinbjörnsson, "1200 V 4H-SiC BJTs with a Common Emitter Current Gain of 60 and Low On-Resistance ", Materials Science Forum, Vols. 600-603, pp. 1151-1154, 2009
Online since
September 2008
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Price
$32.00
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