Paper Title:
1600 V, 5.1 mΩ●cm2 4H-SiC BJT with a High Current Gain of β=70
  Abstract

This paper reports a newly achieved best result on the common emitter current gain of 4H-SiC high power bipolar junction transistors (BJTs). A fabricated 1600 V – 15 A 4H-SiC power BJT with an active area of 1.7 mm2 shows a high DC current gain (b) of 70, when it conducts 9.8 A collector current at a base current of only 140 mA. The maximum AC current gain (DIC/DIB) is up to 78. This high performance BJT has an open base collector-to-emitter blocking voltage (VCEO) of over 1674 V with a leakage current of 1.6 μA, and a specific on-resistance (RSP-ON) of 5.1 mW.cm2 when it conducts 7.0 A (412 A/cm2) at a forward voltage drop of VCE = 2.1 V. A large area 4H-SiC BJT with a footprint of 4.1 mm x 4.1 mm has also shown a DC current gain over 50. These high-gain, high-voltage and high-current 4H-SiC BJTs further support a promising future for 4H-SiC BJT applications.

  Info
Periodical
Materials Science Forum (Volumes 600-603)
Edited by
Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa
Pages
1155-1158
DOI
10.4028/www.scientific.net/MSF.600-603.1155
Citation
J. H. Zhang, P. Alexandrov, J. H. Zhao, "1600 V, 5.1 mΩ●cm2 4H-SiC BJT with a High Current Gain of β=70", Materials Science Forum, Vols. 600-603, pp. 1155-1158, 2009
Online since
September 2008
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Price
$32.00
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