Paper Title:
4H-SiC Bipolar Junction Transistors with a Current Gain of 108
  Abstract

4H-SiC BJTs with a common emitter current gain (b) of 108 at 25°C have been demonstrated. The high current gain was accomplished by using a base as thin as 0.25 μm. The current gain decreases at high temperatures but is still greater than 40 at 300°C. The device demonstrates an open emitter breakdown voltage (BVCBO) of 1150 V, and an open base breakdown voltage (BVCEO) of 250 V. A low specific on-resistance of 3.6 mW-cm2 at 25°C was achieved. The BJTs have shown blocking capabilities over a wide range of operating temperatures up to 300°C.

  Info
Periodical
Materials Science Forum (Volumes 600-603)
Edited by
Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa
Pages
1159-1162
DOI
10.4028/www.scientific.net/MSF.600-603.1159
Citation
Q. J. Zhang, C. Jonas, A. A. Burk, C. Capell, J. Young, R. Callanan, A. K. Agarwal, J. W. Palmour, B. Geil, C. Scozzie, "4H-SiC Bipolar Junction Transistors with a Current Gain of 108 ", Materials Science Forum, Vols. 600-603, pp. 1159-1162, 2009
Online since
September 2008
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$32.00
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