Paper Title:
Electron Irradiation Lifetime Control for SiC Bipolar Devices of 200 kVA High Power SiC Inverters
  Abstract

To reduce the switching power losses of SiC bipolar devices, an electron irradiation lifetime control method was investigated and was successfully applied to the development of 200kVA full SiC inverters, in which SiCGTs and SiC pn diodes irradiated electrons were used at the condition required to minimize inverter power loss.

  Info
Periodical
Materials Science Forum (Volumes 600-603)
Edited by
Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa
Pages
1179-1182
DOI
10.4028/www.scientific.net/MSF.600-603.1179
Citation
Y. Sugawara, S. Ogata, Y. Miyanagi, K. Asano, S. Okada, A. Tanaka, K. Nakayama, T. Izumi, "Electron Irradiation Lifetime Control for SiC Bipolar Devices of 200 kVA High Power SiC Inverters", Materials Science Forum, Vols. 600-603, pp. 1179-1182, 2009
Online since
September 2008
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