Paper Title:
A 13 kV 4H-SiC n-Channel IGBT with Low Rdiff,on and Fast Switching
  Abstract

For the first time, high power 4H-SiC n-IGBTs have been demonstrated with 13 kV blocking and a low Rdiff,on of 22 mWcm2 which surpasses the 4H-SiC material limit for unipolar devices. Normally-off operation and >10 kV blocking is maintained up to 200oC base plate temperature. The on-state resistance has a slight positive temperature coefficient which makes the n-IGBT attractive for parallel configurations. MOS characterization reveals a low net positive fixed charge density in the oxide and a low interface trap density near the conduction band which produces a 3 V threshold and a peak channel mobility of 18 cm2/Vs in the lateral MOSFET test structure. Finally, encouraging device yields of 64% in the on-state and 27% in the blocking indicate that the 4H-SiC n-IGBT may eventually become a viable power device technology.

  Info
Periodical
Materials Science Forum (Volumes 600-603)
Edited by
Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa
Pages
1183-1186
DOI
10.4028/www.scientific.net/MSF.600-603.1183
Citation
M. K. Das, Q. J. Zhang, R. Callanan, C. Capell, J. Clayton, M. Donofrio, S. K. Haney, F. Husna, C. Jonas, J. Richmond, J. J. Sumakeris, "A 13 kV 4H-SiC n-Channel IGBT with Low Rdiff,on and Fast Switching ", Materials Science Forum, Vols. 600-603, pp. 1183-1186, 2009
Online since
September 2008
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: K. Dynefors, V. Desmaris, Joakim Eriksson, Per Åke Nilsson, Niklas Rorsman, Herbert Zirath
1125
Authors: Vera G. Sursaeva
Abstract:When a bicrystal or polycrystal are subjected to a change in temperature, the individual responses of the two adjoining crystals may differ...
801
Authors: X. Zhang, Seo Young Ha, M. Benamara, Marek Skowronski, Joseph J. Sumakeris, Sei Hyung Ryu, Michael J. Paisley, Michael J. O'Loughlin
Abstract:Structure of the “carrot” defects in 4H-SiC homoepitaxial layers deposited by CVD has been investigated by plan-view and cross-sectional...
327
Authors: Zhen Bing Cai, Min Hao Zhu, Xiu Zhou Lin, Ji Liang Mo, Zhong Rong Zhou
Abstract:Nickel base Ni60 and cobalt base Co-Cr-W coatings were prepared on substrate of refractory alloy steel 4Cr14NiW2Mo by laser-cladding...
878
Authors: Qiang Shen, Chang Lian Chen, Fei Chen, Qi Wen Liu, Lian Meng Zhang
Abstract:Porous calcia stabilized zirconia ceramics (CSZC) with closed pores were presurelessly sintered by adding different contents of zirconia...
435