Development of a Practical High-Rate CVD System |
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| Journal | Materials Science Forum (Volumes 600 - 603) |
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| Volume | Silicon Carbide and Related Materials 2007 |
| Edited by | Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa |
| Pages | 119-122 |
| DOI | 10.4028/www.scientific.net/MSF.600-603.119 |
| Citation | Yuuki Ishida et al., 2008, Materials Science Forum, 600-603, 119 |
| Online since | September, 2008 |
| Authors | Yuuki Ishida, Tetsuo Takahashi, Hajime Okumura, Kazuo Arai, Sadafumi Yoshida |
| Keywords | 4H-SiC, Chemical Vapor Deposition (CVD), High Rate Growth, Homoepitaxial Growth |
| Abstract | We have developed a new chemical vapor deposition (CVD) system that is capable of a high growth rate of over 100 µm/h with good uniformities of thickness and carrier concentration. In this CVD system, the process gases contribute efficiently to epitaxial growth. In a demonstration of the abilities of the CVD system, we achieved an average growth rate of 140 µm/h, a thickness uniformity of 3.9%, and a carrier concentration uniformity of 8.9% in a 2-inch wafer, without degradation of the crystallinity. |
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