Paper Title:
Design, Simulation, and Characterization of High-Voltage SiC p-IGBTs
  Abstract

We have designed, simulated, fabricated, and characterized high-voltage 4H-SiC p-channel DMOS-IGBTs on 20 kV blocking layers for use as the next generation of power switching devices. These p-IGBTs exhibit significant conductivity modulation in the drift layer. The maximum currents of the experimental p-channel IGBTs are 1.2x and 2.1x higher than the ideal 20 kV n-channel DMOSFETs at room temperature and 175°C, respectively.

  Info
Periodical
Materials Science Forum (Volumes 600-603)
Edited by
Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa
Pages
1191-1194
DOI
10.4028/www.scientific.net/MSF.600-603.1191
Citation
Y. Sui, J. A. Cooper, X. Wang, G. G. Walden, "Design, Simulation, and Characterization of High-Voltage SiC p-IGBTs ", Materials Science Forum, Vols. 600-603, pp. 1191-1194, 2009
Online since
September 2008
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Price
$32.00
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