Paper Title:
SiC Based Optically-Gated High-Power Solid-State Switch for Pulsed-Power Application
  Abstract

Hybrid SiC pulsed-power switch (having bipolar transistor structure) with 5 kV breakdown voltage and 1 kA peak current rating has been designed, which can be triggered optically using a GaAs or SiC front-end triggering structure with a rise time < 20 ns and for sub-microsecond pulse-widths. Structural details and physics-based simulation results are presented. It is shown, that GaAs triggering structure reduces the optical-triggering power requirement significantly without sacrificing switching speed as compared to a SiC optical-triggering structure.

  Info
Periodical
Materials Science Forum (Volumes 600-603)
Edited by
Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa
Pages
1195-1198
DOI
10.4028/www.scientific.net/MSF.600-603.1195
Citation
S. K. Mazumder, T. Sarkar, "SiC Based Optically-Gated High-Power Solid-State Switch for Pulsed-Power Application ", Materials Science Forum, Vols. 600-603, pp. 1195-1198, 2009
Online since
September 2008
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Price
$32.00
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